Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
150 V |
Current - Continuous Drain (Id) @ 25°C |
33A (Tc) |
Rds On (Max) @ Id, Vgs |
56mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
90 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
2020 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
3.8W (Ta), 170W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO263-3-2 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
800 |
N-Channel 150 V 33A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount PG-TO263-3-2