Parameters |
Mfr |
International Rectifier |
Series |
HEXFET®, StrongIRFET™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Rds On (Max) @ Id, Vgs |
5.1mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id |
3.7V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
130 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4555 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
160W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO263-3 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ECCN |
EAR99 |
HTSUS |
8542.39.0001 |
Standard Package |
212 |
N-Channel 60 V 110A (Tc) 160W (Tc) Surface Mount PG-TO263-3