Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Rds On (Max) @ Id, Vgs |
4mOhm @ 21A, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs |
72 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
3770 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
63W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
N-Channel 20 V 100A (Tc) 63W (Tc) Surface Mount TO-252AA