Parameters |
Mfr |
IXYS |
Series |
CoolMOS™, HiPerDyn™ |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
165mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs |
52 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2000 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
ISOPLUS i4-PAC™ |
Package / Case |
ISOPLUSi5-Pak™ |
Base Product Number |
FMD15 |
RoHS Status |
ROHS3 Compliant |
Standard Package |
1 |
N-Channel 600 V 15A (Tc) Through Hole ISOPLUS i4-PAC™