Parameters |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
33mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id |
5.2V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs |
95 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
6080 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
960W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247 (IXFH) |
Package / Case |
TO-247-3 |
Base Product Number |
IXFH90 |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
238-IXFH90N65X3 |
Standard Package |
300 |
Mfr |
IXYS |
Series |
HiPerFET™, Ultra X3 |
Package |
Tube |
N-Channel 650 V 90A (Tc) 960W (Tc) Through Hole TO-247 (IXFH)