IXYS IXTH2N150

DISCMOSFET N-CH STD-HIVOLTAGE TO

Manufacturer: IXYS
Manufacturer's number: IXYS IXTH2N150
Package: Tube
Datasheet: -
Stock: 2357
SKU: IXTH2N150
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Unit Price: $11.0397

Ext Price: $11.0397

Details

Parameters
Mfr	IXYS
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1500 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	830 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3
Base Product Number	IXTH2
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	238-IXTH2N150
Standard Package	30

N-Channel 1500 V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)