IXYS IXTQ48N65X2M

DISCRETE MOSFET 48A 650V X2 TO3P

Manufacturer: IXYS
Manufacturer's number: IXYS IXTQ48N65X2M
Package: Tube
Datasheet: -
Stock: 7674
SKU: IXTQ48N65X2M
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Unit Price: $9.9780

Ext Price: $9.9780

Details

Parameters
Mfr	IXYS
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	70W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	238-IXTQ48N65X2M
Standard Package	30

N-Channel 650 V 48A (Tc) 70W (Tc) Through Hole TO-3P