Parameters |
Standard Package |
400 |
Mfr |
IXYS |
Series |
- |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
- |
Rds On (Max) @ Id, Vgs |
- |
Vgs(th) (Max) @ Id |
- |
Vgs (Max) |
- |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
- |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-7 |
Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number |
LSIC1MO120 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
238-LSIC1MO120T0080-TU |
N-Channel 1200 V 39A (Tc) Surface Mount TO-263-7