| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Transistor Type |
PNP - Pre-Biased |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Resistor - Base (R1) |
10 kOhms |
| Resistor - Emitter Base (R2) |
10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
500nA |
| Frequency - Transition |
200 MHz |
| Power - Max |
200 mW |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
S-Mini |
| Base Product Number |
RN2402 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
3,000 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount S-Mini