| Parameters |
| Mfr |
Transphorm |
| Series |
- |
| Package |
Tube |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
600 V |
| Current - Continuous Drain (Id) @ 25°C |
9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
350mOhm @ 5.5A, 8V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
9.3 nC @ 4.5 V |
| Vgs (Max) |
±18V |
| Input Capacitance (Ciss) (Max) @ Vds |
760 pF @ 480 V |
| FET Feature |
- |
| Power Dissipation (Max) |
65W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220AB |
| Package / Case |
TO-220-3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
50 |
N-Channel 600 V 9A (Tc) 65W (Tc) Through Hole TO-220AB