Harris Corporation IRFD110

1A, 100V, 0.600 OHM, N-CHANNEL

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation IRFD110
Package: Bulk
Datasheet: PDF
Stock: 44
SKU: IRFD110
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Unit Price: $0.5700

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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)
Base Product Number	IRFD110
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP