Parameters |
Mfr |
NEC Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55 V |
Current - Continuous Drain (Id) @ 25°C |
32A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
24mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
41 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2000 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
1.2W (Ta), 66W (Tc) |
Operating Temperature |
175°C |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-251 (MP-3) |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number |
NP32 |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
N-Channel 55 V 32A (Ta) 1.2W (Ta), 66W (Tc) Through Hole TO-251 (MP-3)