Nexperia USA Inc. GAN041-650WSBQ - Nexperia USA Inc. FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Nexperia USA Inc. GAN041-650WSBQ

GAN041-650WSB/SOT429/TO-247

  • Manufacturer: Nexperia USA Inc.
  • Manufacturer's number: Nexperia USA Inc. GAN041-650WSBQ
  • Package: Tube
  • Datasheet: PDF
  • Stock: 94
  • SKU: GAN041-650WSBQ
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $19.0700

Ext Price: $19.0700

Details

Tags

Parameters
Mfr Nexperia USA Inc.
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
FET Feature -
Power Dissipation (Max) 187W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 650 V 47.2A 187W Through Hole TO-247-3