Nexperia USA Inc. GAN080-650EBEZ

650 V, 80 MOHM GALLIUM NITRIDE (

Manufacturer: Nexperia USA Inc.
Manufacturer's number: Nexperia USA Inc. GAN080-650EBEZ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: GAN080-650EBEZ
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Unit Price: $9.2500

Ext Price: $9.2500

Details

Parameters
Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V
Rds On (Max) @ Id, Vgs	80mOhm @ 8A, 6V
Vgs(th) (Max) @ Id	2.5V @ 30.7mA
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 6 V
Vgs (Max)	+7V, -6V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	240W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	DFN8080-8
Package / Case	8-VDFN Exposed Pad
Base Product Number	GAN080
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 650 V 29A (Ta) 240W (Ta) Surface Mount, Wettable Flank DFN8080-8