Parameters |
Mfr |
Nexperia USA Inc. |
Series |
TrenchMOS™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
300mA (Ta) |
Rds On (Max) @ Id, Vgs |
4.1Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
0.72 nC @ 4.5 V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
46 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
360mW (Ta), 2.7W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DFN1006B-3 |
Package / Case |
SC-101, SOT-883 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2156-NX3008PBKMB,315-1727 |
Standard Package |
1 |
P-Channel 30 V 300mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3