Nexperia USA Inc. PHK12NQ03LT,518-NEX

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Nexperia USA Inc.
Manufacturer's number: Nexperia USA Inc. PHK12NQ03LT,518-NEX
Package: Bulk
Datasheet: -
Stock: 8103
SKU: PHK12NQ03LT,518-NEX
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Details

Parameters
Mfr	Nexperia USA Inc.
Series	TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11.8A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.6 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1335 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	2 (1 Year)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 30 V 11.8A (Tj) 2.5W (Ta) Surface Mount 8-SO