Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
500 mA |
Voltage - Collector Emitter Breakdown (Max) |
25 V |
Vce Saturation (Max) @ Ib, Ic |
- |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
150 @ 2mA, 4.5V |
Power - Max |
625 mW |
Frequency - Transition |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-2N3392 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3