| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
500 mA |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 3mA, 50mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
180 @ 2mA, 4.5V |
| Power - Max |
625 mW |
| Frequency - Transition |
- |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-2N3417 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 50 V 500 mA 625 mW Through Hole TO-92-3