Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
PNP |
Vce Saturation (Max) @ Ib, Ic |
- |
Current - Collector Cutoff (Max) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
Power - Max |
300 mW |
Frequency - Transition |
- |
Operating Temperature |
-65°C ~ 125°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-2N4870 |
Standard Package |
1 |
Bipolar (BJT) Transistor PNP 300 mW Through Hole TO-92