| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
80 V |
| Vce Saturation (Max) @ Ib, Ic |
600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) |
500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 500mA, 1V |
| Power - Max |
30 W |
| Frequency - Transition |
3MHz |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-225AA, TO-126-3 |
| Supplier Device Package |
TO-126 |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-2N4923 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 80 V 1 A 3MHz 30 W Through Hole TO-126