Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
600mV @ 100mA, 1A |
Current - Collector Cutoff (Max) |
500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 500mA, 1V |
Power - Max |
30 W |
Frequency - Transition |
3MHz |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-225AA, TO-126-3 |
Supplier Device Package |
TO-126 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-2N4923 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 80 V 1 A 3MHz 30 W Through Hole TO-126