Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
16 A |
Voltage - Collector Emitter Breakdown (Max) |
160 V |
Vce Saturation (Max) @ Ib, Ic |
3.5V @ 2A, 16A |
Current - Collector Cutoff (Max) |
750µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
15 @ 8A, 2V |
Power - Max |
125 W |
Frequency - Transition |
1MHz |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-218-3 |
Supplier Device Package |
SOT-93 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-MJE4343 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 160 V 16 A 1MHz 125 W Through Hole SOT-93