| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
16 A |
| Voltage - Collector Emitter Breakdown (Max) |
160 V |
| Vce Saturation (Max) @ Ib, Ic |
3.5V @ 2A, 16A |
| Current - Collector Cutoff (Max) |
750µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
15 @ 8A, 2V |
| Power - Max |
125 W |
| Frequency - Transition |
1MHz |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-218-3 |
| Supplier Device Package |
SOT-93 |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-MJE4343 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 160 V 16 A 1MHz 125 W Through Hole SOT-93