Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) |
20 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 10µA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20000 @ 10mA, 5V |
Power - Max |
625 mW |
Frequency - Transition |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 Long Body |
Supplier Device Package |
TO-92 (TO-226) |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-MPSA12 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN - Darlington 20 V 625 mW Through Hole TO-92 (TO-226)