Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Vce Saturation (Max) @ Ib, Ic |
170mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
25µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
69 @ 300mA, 0V |
Power - Max |
650 mW |
Frequency - Transition |
- |
Operating Temperature |
90°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-1-3 Metal Can |
Supplier Device Package |
TO-1 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE103A |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 1 A 650 mW Through Hole TO-1