| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1 A |
| Vce Saturation (Max) @ Ib, Ic |
170mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) |
25µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
69 @ 300mA, 0V |
| Power - Max |
650 mW |
| Frequency - Transition |
- |
| Operating Temperature |
90°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-1-3 Metal Can |
| Supplier Device Package |
TO-1 |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE103A |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 1 A 650 mW Through Hole TO-1