| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
5 A |
| Voltage - Collector Emitter Breakdown (Max) |
20 V |
| Vce Saturation (Max) @ Ib, Ic |
1V @ 100mA, 3A |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
340 @ 500mA, 2V |
| Power - Max |
750 mW |
| Frequency - Transition |
150MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92 |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE11 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 20 V 5 A 150MHz 750 mW Through Hole TO-92