Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
5 A |
Voltage - Collector Emitter Breakdown (Max) |
20 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 100mA, 3A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
340 @ 500mA, 2V |
Power - Max |
750 mW |
Frequency - Transition |
150MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE11 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 20 V 5 A 150MHz 750 mW Through Hole TO-92