Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
180 V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 20mA, 200mA |
Current - Collector Cutoff (Max) |
100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 10mA, 10V |
Power - Max |
10 W |
Frequency - Transition |
35MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-202 Long Tab |
Supplier Device Package |
TO-202N |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE190 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 180 V 1 A 35MHz 10 W Through Hole TO-202N