| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
180 V |
| Vce Saturation (Max) @ Ib, Ic |
500mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) |
100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 10mA, 10V |
| Power - Max |
10 W |
| Frequency - Transition |
35MHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-202 Long Tab |
| Supplier Device Package |
TO-202N |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE190 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 180 V 1 A 35MHz 10 W Through Hole TO-202N