| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
8 NPN Darlington |
| Current - Collector (Ic) (Max) |
600mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
1.6V @ 350mA, 500A |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
| Power - Max |
1W |
| Frequency - Transition |
- |
| Operating Temperature |
-20°C ~ 85°C (TA) |
| Mounting Type |
Through Hole |
| Package / Case |
18-DIP (0.300", 7.62mm) |
| Supplier Device Package |
18-PDIP |
| Base Product Number |
NTE20 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH info available upon request |
| ECCN |
EAR99 |
| HTSUS |
8542.31.0000 |
| Other Names |
2368-NTE2018 |
| Standard Package |
1 |
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA 1W Through Hole 18-PDIP