Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
15 A |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Vce Saturation (Max) @ Ib, Ic |
400mV @ 400mA, 8A |
Current - Collector Cutoff (Max) |
100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 1A, 2V |
Power - Max |
90 W |
Frequency - Transition |
20MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE2304 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 50 V 15 A 20MHz 90 W Through Hole TO-3P