| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
500 mA |
| Voltage - Collector Emitter Breakdown (Max) |
30 V |
| Vce Saturation (Max) @ Ib, Ic |
1.4V @ 30mA, 300mA |
| Current - Collector Cutoff (Max) |
30nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 150mA, 10V |
| Power - Max |
1.25 W |
| Frequency - Transition |
350MHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
14-DIP (0.300", 7.62mm) |
| Supplier Device Package |
14-DIP |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE2320 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 30 V 500 mA 350MHz 1.25 W Through Hole 14-DIP