| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
500 mA |
| Voltage - Collector Emitter Breakdown (Max) |
40 V |
| Vce Saturation (Max) @ Ib, Ic |
1.6V @ 30mA, 300mA |
| Current - Collector Cutoff (Max) |
50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 150mA, 10V |
| Power - Max |
650 mW |
| Frequency - Transition |
350MHz |
| Operating Temperature |
-65°C ~ 200°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
14-DIP (0.300", 7.62mm) |
| Supplier Device Package |
14-DIP |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE2321 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 40 V 500 mA 350MHz 650 mW Through Hole 14-DIP