Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
500 mA |
Voltage - Collector Emitter Breakdown (Max) |
40 V |
Vce Saturation (Max) @ Ib, Ic |
1.6V @ 30mA, 300mA |
Current - Collector Cutoff (Max) |
50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 150mA, 10V |
Power - Max |
650 mW |
Frequency - Transition |
350MHz |
Operating Temperature |
-65°C ~ 200°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
14-DIP (0.300", 7.62mm) |
Supplier Device Package |
14-DIP |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE2321 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 40 V 500 mA 350MHz 650 mW Through Hole 14-DIP