| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
8 A |
| Voltage - Collector Emitter Breakdown (Max) |
60 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 8mA, 4A |
| Current - Collector Cutoff (Max) |
100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 4A, 3V |
| Power - Max |
1.3 W |
| Frequency - Transition |
20MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
3-SIP |
| Supplier Device Package |
3-SIP |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE2340 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN - Darlington 60 V 8 A 20MHz 1.3 W Through Hole 3-SIP