| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
4 A |
| Voltage - Collector Emitter Breakdown (Max) |
80 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 6mA, 3A |
| Current - Collector Cutoff (Max) |
20µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 1A, 2V |
| Power - Max |
1 W |
| Frequency - Transition |
- |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
3-SIP |
| Supplier Device Package |
3-SIP |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE2351 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 1 W Through Hole 3-SIP