Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN - Darlington |
Current - Collector (Ic) (Max) |
4 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
1.5V @ 6mA, 3A |
Current - Collector Cutoff (Max) |
20µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 1A, 2V |
Power - Max |
1 W |
Frequency - Transition |
- |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
3-SIP |
Supplier Device Package |
3-SIP |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE2351 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 1 W Through Hole 3-SIP