Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
10 A |
Voltage - Collector Emitter Breakdown (Max) |
800 V |
Vce Saturation (Max) @ Ib, Ic |
5V @ 2A, 8A |
Current - Collector Cutoff (Max) |
1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
8 @ 1A, 5V |
Power - Max |
150 W |
Frequency - Transition |
- |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE2354 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 800 V 10 A 150 W Through Hole TO-3P