| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
10 A |
| Voltage - Collector Emitter Breakdown (Max) |
800 V |
| Vce Saturation (Max) @ Ib, Ic |
5V @ 2A, 8A |
| Current - Collector Cutoff (Max) |
1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
8 @ 1A, 5V |
| Power - Max |
150 W |
| Frequency - Transition |
- |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE2354 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 800 V 10 A 150 W Through Hole TO-3P