Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
6 A |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Vce Saturation (Max) @ Ib, Ic |
5V @ 1A, 5A |
Current - Collector Cutoff (Max) |
10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
8 @ 1A, 5V |
Power - Max |
50 W |
Frequency - Transition |
3MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Supplier Device Package |
TO-3P(H)IS |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE2678 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 600 V 6 A 3MHz 50 W Through Hole TO-3P(H)IS