| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
120 V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
350 @ 2mA, 6V |
| Power - Max |
300 mW |
| Frequency - Transition |
100MHz |
| Operating Temperature |
125°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH info available upon request |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE2696 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 300 mW Through Hole TO-92