Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
10 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 400mA, 8A |
Current - Collector Cutoff (Max) |
10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 2A, 1V |
Power - Max |
1.67 W |
Frequency - Transition |
50MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE377 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 80 V 10 A 50MHz 1.67 W Through Hole TO-220