Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
100 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
160 @ 150mA, 5V |
Power - Max |
900 mW |
Frequency - Transition |
140MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 Long Body |
Supplier Device Package |
TO-92L |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE383 |
Standard Package |
1 |
Bipolar (BJT) Transistor PNP 100 V 1 A 140MHz 900 mW Through Hole TO-92L