Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
3 A |
Voltage - Collector Emitter Breakdown (Max) |
900 V |
Vce Saturation (Max) @ Ib, Ic |
10V @ 500mA, 1.5A |
Current - Collector Cutoff (Max) |
10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
3 @ 1.5A, 10V |
Power - Max |
50 W |
Frequency - Transition |
- |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-204AA, TO-3 |
Supplier Device Package |
TO-3 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE62 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 900 V 3 A 50 W Through Hole TO-3