Parameters |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
1.5V @ 500mA, 5A |
Current - Collector Cutoff (Max) |
100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 50mA, 5V |
Power - Max |
2 W |
Frequency - Transition |
120MHz |
Operating Temperature |
-65°C ~ 200°C |
Mounting Type |
Chassis, Stud Mount |
Package / Case |
TO-111-4, Stud |
Supplier Device Package |
TO-111 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2368-NTE75 |
Standard Package |
1 |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
5 A |
Bipolar (BJT) Transistor NPN 80 V 5 A 120MHz 2 W Chassis, Stud Mount TO-111