Parameters |
FET Feature |
- |
Power Dissipation (Max) |
306W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-BUK6E4R0-75C,127-954 |
Standard Package |
1 |
Mfr |
NXP Semiconductors |
Series |
Automotive, AEC-Q101, TrenchMOS™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
75 V |
Current - Continuous Drain (Id) @ 25°C |
120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
4.2mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
234 nC @ 10 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
15450 pF @ 25 V |
N-Channel 75 V 120A (Tc) 306W (Tc) Through Hole I2PAK