Parameters |
Mfr |
NXP Semiconductors |
Series |
Automotive, AEC-Q101, TrenchMOS™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
2.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
91 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
7130 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
263W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
Other Names |
2156-BUK762R6-40E,118-954 |
Standard Package |
1 |
N-Channel 40 V 100A (Tc) 263W (Tc) Surface Mount D2PAK