NXP Semiconductors BUK9E08-55B,127

NEXPERIA BUK9E08-55B - 75A, 55V,

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors BUK9E08-55B,127
Package: Bulk
Datasheet: PDF
Stock: 9939
SKU: BUK9E08-55B,127
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Details

Parameters
Mfr	NXP Semiconductors
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 5 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	5280 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	203W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-BUK9E08-55B,127-954
Standard Package	1

N-Channel 55 V 75A (Tc) 203W (Tc) Through Hole I2PAK