| Parameters |
| Mfr |
NXP Semiconductors |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
2 PNP (Dual) |
| Current - Collector (Ic) (Max) |
1A |
| Voltage - Collector Emitter Breakdown (Max) |
60V |
| Vce Saturation (Max) @ Ib, Ic |
340mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 500mA, 2V |
| Power - Max |
510mW |
| Frequency - Transition |
125MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-UFDFN Exposed Pad |
| Supplier Device Package |
6-HUSON (2x2) |
| Base Product Number |
PBSS5160 |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)