Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
2 PNP (Dual) |
Current - Collector (Ic) (Max) |
1A |
Voltage - Collector Emitter Breakdown (Max) |
60V |
Vce Saturation (Max) @ Ib, Ic |
340mV @ 100mA, 1A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 500mA, 2V |
Power - Max |
510mW |
Frequency - Transition |
125MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-UFDFN Exposed Pad |
Supplier Device Package |
6-HUSON (2x2) |
Base Product Number |
PBSS5160 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)