| Parameters |
| Mfr |
NXP Semiconductors |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
60 V |
| Vce Saturation (Max) @ Ib, Ic |
460mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) |
100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
160 @ 100mA, 2V |
| Power - Max |
325 mW |
| Frequency - Transition |
150MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XDFN Exposed Pad |
| Supplier Device Package |
DFN1010D-3 |
| RoHS Status |
RoHS non-compliant |
| REACH Status |
Vendor Undefined |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0075 |
| Other Names |
2156-PBSS5160QAZ |
| Standard Package |
1 |
Bipolar (BJT) Transistor PNP 60 V 1 A 150MHz 325 mW Surface Mount DFN1010D-3