Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
20 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
100 kOhms |
Resistor - Emitter Base (R2) |
100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
1µA |
Power - Max |
250 mW |
Mounting Type |
Surface Mount |
Package / Case |
SC-101, SOT-883 |
Supplier Device Package |
DFN1006-3 |
Base Product Number |
PDTC115 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 20 mA 250 mW Surface Mount DFN1006-3