NXP Semiconductors PDTC123EMB,315 - NXP Semiconductors Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP Semiconductors PDTC123EMB,315

NOW NEXPERIA PDTC123EMB - SMALL

  • Manufacturer: NXP Semiconductors
  • Manufacturer's number: NXP Semiconductors PDTC123EMB,315
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 8067
  • SKU: PDTC123EMB,315
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP Semiconductors
Series -
Package Bulk
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition 230 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case 3-XFDFN
Supplier Device Package DFN1006B-3
Base Product Number PDTC123
HTSUS 0000.00.0000
Standard Package 1
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount DFN1006B-3