NXP Semiconductors PHB29N08T,118

NEXPERIA PHB29N08T - 27A, 75V, 0

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors PHB29N08T,118
Package: Bulk
Datasheet: PDF
Stock: 2
SKU: PHB29N08T,118
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Details

Parameters
Mfr	NXP Semiconductors
Series	TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	11V
Rds On (Max) @ Id, Vgs	50mOhm @ 14A, 11V
Vgs(th) (Max) @ Id	5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
Other Names	2156-PHB29N08T,118-954
Standard Package	812

N-Channel 75 V 27A (Tc) 88W (Tc) Surface Mount D2PAK