| Parameters |
| Mfr |
NXP Semiconductors |
| Series |
TrenchMOS™ |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current - Continuous Drain (Id) @ 25°C |
7.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Rds On (Max) @ Id, Vgs |
50mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
10 nC @ 4.5 V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
1020 pF @ 20 V |
| FET Feature |
- |
| Power Dissipation (Max) |
5W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-SO |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-PMK50XP,518-954 |
| Standard Package |
1 |
P-Channel 20 V 7.9A (Tc) 5W (Tc) Surface Mount 8-SO