Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
2.4A (Ta) |
Rds On (Max) @ Id, Vgs |
128mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id |
1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
6 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
386 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
463mW (Ta), 4.45W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-PMV100XPEA215-954 |
Standard Package |
6,693 |
P-Channel 20 V 2.4A (Ta) 463mW (Ta), 4.45W (Tc) Surface Mount SOT-23