Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
54mOhm @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id |
900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
10 nC @ 4.5 V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
551 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
400mW (Ta), 8.33W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DFN1010D-3 |
Package / Case |
3-XDFN Exposed Pad |
Other Names |
2156-PMXB43UNE/S500Z |
Standard Package |
1 |
N-Channel 20 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3