Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
53A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
7V, 10V |
Rds On (Max) @ Id, Vgs |
18mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
21.4 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1482 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
111W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-PSMN018-100ESFQ-954 |
Standard Package |
1 |
N-Channel 100 V 53A (Ta) 111W (Ta) Through Hole I2PAK